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DIM300XCM45-F000
IGBT Chopper Module Provisional
DS5918 1.2 December 2007 (LN25834)
FEATURES
10s Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability High isolation module
KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max)
4500V 2.9 V 300A 600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
High Reliability Inverters Motor Controllers Traction Drives Choppers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A. The DIM300XCM45-F000 is a 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As: DIM300XCM45-F000 Note: When ordering, please use the complete part number
Outline type code: X (See package details for further information) Fig. 2 Electrical connections - (not to scale)
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DIM300XCM45-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol QPD
2
Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max.transistor power dissipation Diode I t value (Diode arm) Isolation voltage-per module Partial discharge-per module
2
Test Conditions VGE =0V
Max. 4500 20
Units V V A A kW kA s kV pC
2
Tcase =100 C 1ms, Tcase=115 C Tcase =25 C, Tj =150 C VR =0,tp =10ms,Tj =125 C Commoned terminals to base plate. AC RMS,1 min,50Hz IEC1287.V1 =6900V, V2 =5100V, 50Hz RMS
300 600 5.2 51 10.2 10
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index)
Symbol
AlN AlSiC 56mm 26mm > 600 Test Conditions Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting M6 Electrical connections M4 Electrical connections M8 -40 Min Typ. Max 24 48 8 150 125 125 5 2 10 Units C/kW C/kW C/kW C C C Nm Nm Nm
Parameter Thermal resistance -transistor (per switch) Thermal resistance -diode (per switch) Thermal resistance -case to heatsink (per module) Junction temperature
Rth(j-c) Rth(j-c) Rth(c-h) Tj
Tstg
Storage temperature range Screw torque
2/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM300XCM45-F000
ELECTRICAL CHARACTERISTICS
T case = 25 unless stated otherwise. C
Symbol
Parameter
Test Conditions
VGE =0V,VCE =VCES
Min
Typ
Max 2 60 4
Units mA mA uA V V V
ICES IGES VGE(TH)
Collector cut-off current
VGE =0V,VCE =VCES ,Tcase =125 C
Gate leakage current Gate threshold voltage
Collector-emitter saturation voltage
VGE = 20V,VCE =0V IC =80mA,VGE =VCE VGE =15V,IC =300A VGE =15V,IC =300A,TVJ =125 C DC tp =1ms IF =300A IF =300A,TVJ =125 C VCE =25V,VGE =0V,f =1MHz VCE =25V,VGE =0V,f =1MHz --
5.5
6.5 2.9 3.5
7.0
VCE(sat)
IF IFM
Free-wheel/Anti-parallel Diode forward current Free-wheel/Anti-parallel Diode maximum forward current Free-wheel/Anti-parallel Diode forward voltage Input capacitance Reverse transfer capacitance Inductance per arm Internal transistor resistance
300 600 3.0 3.1 65 0.9 30 270
A A V V nF nF nH A A
VF Cies Cres LM RINT
Tj 125 C,VCC 3000V, SCData
I1 I2
1400 1250
Short circuit I SC
t p = 10 us, VCE(max)=VCES - L*.di/dt IEC 60747-9
Note:
*
Measured at the power busbars and not the auxiliary terminals
L is the circuit inductance + L M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/7
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DIM300XCM45-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25 unless stated otherwise C
Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr Erec
Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy
Test Conditions IC =300A VGE =15V VCE =2250V RG(ON) =10 RG(OFF)=22 Cge =55nF L ~200nH
Min
Typ. 5.0 250 750 850 220 900 10
Max
Units us ns mJ ns ns mJ uC uC A mJ
IF =300A,VCE =2250V, dIF/dt =1500A/us
240 350 300
Tcase = 125 unless stated otherwise C Symbol
Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy
Test Conditions IC =300A VGE =15V VCE =2250V RG(ON) =10 RG(OFF)=22 Cge =55nF L ~200nH IF =300A,VCE =2250V, dIF/dt =1500A/us
Min
Typ. 5.2 250 850 800 220 1350 430 410 530
Max
Units us ns mJ ns ns mJ uC A mJ
td(off) tf EOFF td(on) tr EON Qrr Irr Erec
4/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM300XCM45-F000
500 Tcase = 25 C 450 400
600 Tcase =125 C 500
Collector current, Ic (A)
350 300 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 5.0 Vg=10V Vg=12V Vg=15V Vg=20V
Collector current, Ic (A)
400
300
200
100
Vge=10V Vge=12V Vge=15V Vge=20V 0.0 1.0 2.0 3.0 4.0 5.0 6.0
0
Collector-emitter voltage, Vce (V) Fig. 3 Typical output characteristics 1600
1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300
0 0 Eon (mJ) Eoff (mJ) Erec (mJ) Conditions Vcc = 2250V Tc = 125 C Cge = 55nF Vge = +/- 15V Rg(on) = 10 Rg(off) = 22 4000
Collector-emitter voltage, Vce (V)
Fig. 4 Typical output characteristics
3500
Switching energy, Esw (mJ)
3000
Switching energy, - Esw (mJ)
Conditions: Vcc = 2250V Tc = 125 C Cge = 55nF Vge = +/- 15V Ic = 300A
2500 Eon (mJ) 2000 Eoff (mJ) Erec (mJ) 1500
1000
500
10
20
30
40
50
60
Collector current, Ic (A)
Gate resistance, Rg (Ohms)
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5/7
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DIM300XCM45-F000
600 550 500 450 600 25C 125C 700 Tcase = 125 C Vge = +/-15V Rg(off) =22ohms
350 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector current, Ic (A)
400
Forward current, IF (A)
500 Module 400 Chip
300
200
100
Forward voltage, VF (V)
0 4000
4200
4400
4600
4800
5000
Collector emitter voltage, Vce (V)
Fig. 7 Diode typical forward characteristics
100 500 450 Tj = 125 C
Fig. 8 Reverse bias safe operating area
Transient thermal impedance, Zthj-c ( C/kW)
Rth IGBT Rth Diode
Reverse recoery current, Irr-(A)
400 350 300 250 200 150 100 50 0 0 1000 2000 3000 4000 5000
10
R IGBT Diode
A
R
A
1.29 0.14 0.645 0.14
4.5 4.12 2.25 4.12
5.21 23.41 2.605 23.41
12.93 146.3 6.465 146.3
Reverse voltage, VR -(V)
1 0.001
0.01
0.1
1
10
Time, (s)
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM300XCM45-F000
PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1100g Module outline type code: X
Fig. 11 Outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
7/7
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DIM300XCM45-F000
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
8/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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